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SSR2008M 查看數據表(PDF) - Solid State Devices, Inc.

零件编号
产品描述 (功能)
生产厂家
SSR2008M
SSDI
Solid State Devices, Inc. SSDI
SSR2008M Datasheet PDF : 2 Pages
1 2
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SSR20 __ __ __ __
│ │ │ └ Screening 2/
│││
__ = Not Screened
│││
│││
TX = TX Level
TXV = TXV Level
│││
S = S Level
│ │ │ Lead Options
│ │└
__ = Straight Leads,
││
DB = Bent Down
││
UB = Bent Up
│ │ Package
│└
M = TO-254
Z = TO-254Z
Voltage / Family
08 = 80V
09 = 90V
10 = 100V
SSR2008M, SSR2008Z
SSR2009M, SSR2009Z
SSR2010M, SSR2010Z
20 AMPS
100 VOLTS
SCHOTTKY
RECTIFER
FEATURES:
PIV: 100 Volts
Low Reverse Leakage Current
Low Forward Voltage Drop
Guard Ring for Overvoltage Protection
Isolated Hermetically Sealed Package
Available in Glass or Ceramic Seal Packages
Custom Lead Forming Available
Eutectic Die Attach
175°C Operating Junction Temperature
TX, TXV, and Space Level Screening
Available
MAXIMUM RATINGS3/
Symbol Value
Unit
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Average Rectified Forward Current 1/4/
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
Peak Surge Current 4/
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)
Operating and Storage Temperature
Maximum Thermal Resistance4/
(Junction to Case)
SSR2008M & Z
SSR2009M & Z
SSR2010M & Z
VRRM
VRWM
VR
IO
80
90
Volts
100
20
Amps
IFSM
300
Amps
TOP & Tstg -65 to +175
°C
RθJC
1.2
°C/W
NOTE:
1/ Derate linearly at 1A/°C for TC > 155°C
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ All electrical characteristics @25°C, unless otherwise specified
4/ Pins 2 and 3 externally connected together
TO-254
TO-254Z
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0091J
DOC

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