SST27SF010 查看數據表（PDF） - Silicon Storage Technology

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SST27SF010

256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

Silicon Storage Technology 

256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash

SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020

Data Sheet

TABLE 2: PIN DESCRIPTION

Symbol

AMS1-A0

DQ7-DQ0

Pin Name

Address Inputs

Data Input/output

Functions

To provide memory addresses

To output data during Read cycles and receive input data during Program cycles

The outputs are in tri-state when OE# or CE# is high.

CE#

Chip Enable

To activate the device when CE# is low

OE#

Output Enable

For SST27SF256/010/020, to gate the data output buffers during Read operation

OE#/VPP

Output Enable/VPP For SST27SF512, to gate the data output buffers during Read operation and high voltage

pin during Chip-Erase and programming operation

VPP

Power Supply for For SST27SF256/010/020, high voltage pin during Chip-Erase and programming opera-

Program or Erase tion 12V (±5%)

VDD

Power Supply

To provide 5.0V supply (±10%)

VSS

Ground

NC

No Connection

Unconnected pins.

1. AMS = Most significant address

AMS = A14 for SST27SF256, A15 for SST27SF512, A16 for SST27SF010, and A17 for SST27SF020

T2.3 502

©2001 Silicon Storage Technology, Inc.

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S71152-02-000 5/01 502

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