SST27SF010 查看數據表（PDF） - Silicon Storage Technology

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SST27SF010

256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

Silicon Storage Technology 

256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash

SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020

Data Sheet

TABLE 7: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF256

VDD=5.0V±10%, VPP=VPPH (Ta=25°C±5°C)

Limits

Symbol Parameter

Min Max Units Test Conditions

IDD

IPP

ILI

ILO

VH

IH

VPPH

VDD Erase or Program Current

VPP Erase or Program Current

Input Leakage Current

Output Leakage Current

Supervoltage for A9

Supervoltage Current for A9

High Voltage for VPP Pin

30 mA CE#=VIL, OE#=VIH, VPP=12V±5%, VDD=VDD Max

1 mA CE#=VIL, OE#=VIH, VPP=12V±5%, VDD=VDD Max

1 µA VIN=GND to VDD, VDD=VDD Max

1

µA VOUT=GND to VDD, VDD=VDD Max

11.4 12.6 V CE#=OE#=VIL,

100 µA CE#=OE#=VIL, A9=VH Max

11.4 12.6 V

T7.1 502

TABLE 8: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF512

VDD=5.0V±10%, VPP=VPPH (Ta=25°C±5°C)

Limits

Symbol Parameter

Min Max Units Test Conditions

IDD

IPP

ILI

ILO

VH

IH

VPPH

VDD Erase or Program Current

VPP Erase or Program Current

Input Leakage Current

Output Leakage Current

Supervoltage for A9

Supervoltage Current for A9

High Voltage for OE#/VPP Pin

30 mA CE#=VIL, OE#/VPP=12V±5%, VDD=VDD Max

1 mA CE#=VIL, OE#/VPP=12V±5%, VDD=VDD Max

1 µA VIN=GND to VDD, VDD=VDD Max

1

µA VOUT=GND to VDD, VDD=VDD Max

11.4 12.6 V CE#=OE#/VPP=VIL,

100 µA CE#=OE#/VPP=VIL, A9=VH Max

11.4 12.6 V

T8.1 502

TABLE 9: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF010/020

VDD=5.0V±10%, VPP=VPPH (Ta=25°C±5°C)

Limits

Symbol Parameter

Min Max Units Test Conditions

IDD

IPP

ILI

ILO

VH

IH

VPPH

VDD Erase or Program Current

VPP Erase or Program Current

Input Leakage Current

Output Leakage Current

Supervoltage for A9

Supervoltage Current for A9

High Voltage for VPP Pin

30 mA CE#=PGM#=VIL, OE#=VIH, VPP=12V±5%,

VDD=VDD Max

1 mA CE#=PGM#=VIL, OE#=VIH, VPP=12V±5%,

VDD=VDD Max

1 µA VIN =GND to VDD, VDD=VDD Max

1

µA VOUT =GND to VDD, VDD=VDD Max

11.4 12.6 V CE#=OE#=VIL,

100 µA CE#=OE#=VIL, A9=VH Max

11.4 12.6 V

T9.1 502

©2001 Silicon Storage Technology, Inc.

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S71152-02-000 5/01 502

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