SST25VF512A 查看數據表（PDF） - Silicon Storage Technology

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SST25VF512A

512 Kbit SPI Serial Flash

Silicon Storage Technology 

512 Kbit SPI Serial Flash

SST25VF512A

Byte-Program

The Byte-Program instruction programs the bits in the

selected byte to the desired data. The selected byte must

be in the erased state (FFH) when initiating a Program

operation. A Byte-Program instruction applied to a pro-

tected memory area will be ignored.

Prior to any Write operation, the Write-Enable (WREN)

instruction must be executed. CE# must remain active low

for the duration of the Byte-Program instruction. The Byte-

Data Sheet

Program instruction is initiated by executing an 8-bit com-

mand, 02H, followed by address bits [A23-A0]. Following the

address, the data is input in order from MSB (bit 7) to LSB

(bit 0). CE# must be driven high before the instruction is

executed. The user may poll the Busy bit in the software

status register or wait TBP for the completion of the internal

self-timed Byte-Program operation. See Figure 6 for the

Byte-Program sequence.

CE#

MODE 3

SCK MODE 0

0 1 2345 6 78

15 16

23 24 31 32 39

SI

02

MSB

SO

FIGURE 6: BYTE-PROGRAM SEQUENCE

ADD.

MSB

ADD.

HIGH IMPEDANCE

ADD. DIN

MSB LSB

1264 F06.0

©2006 Silicon Storage Technology, Inc.

11

S71264-02-000

1/06

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