SST31LF041 查看數據表（PDF） - Silicon Storage Technology
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SST31LF041 Datasheet PDF : 26 Pages
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4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory
SST31LF041 / SST31LF041A / SST31LF043 / SST31LF043A
Data Sheet
A11
1
A9
2
A8
3
A13
4
A14
5
A17
6
WE#
7
VDD
8
A18
9
A16
10
A15
11
A12
12
A7
13
A6
14
A5
15
A4
16
Standard Pinout
Top View
Die Up
32
OE#/BES#
31
A10
30
BEF#
29
DQ7
28
DQ6
27
DQ5
26
DQ4
25
DQ3
24
VSS
23
DQ2
22
DQ1
21
DQ0
20
A0
19
A1
18
A2
17
A3
349 ILL F01A.1
FIGURE 2: PIN ASSIGNMENTS FOR 32-LEAD TSOP (8MM X 14MM) - SSTLF041A/043A
TABLE 2: PIN DESCRIPTION
Symbol Pin Name
Functions
AMS1-A0 Address Inputs
DQ7-DQ0 Data Input/output
To provide memory addresses. A18-A0 to provide flash address
A16-A0 to provide SRAM addresses for
SST32LF041/041A
A14-A0 to provide SRAM addresses for
SST31LF043/043A
During flash Sector-Erase, A18-A12 address lines will select the sector.
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a flash Erase/Program cycle.
The outputs are in tri-state when OE# or BES# and BEF# are high.
BES#
SRAM Memory Bank Enable To activate the SRAM memory bank when BES# is low.
Note: For SST31LF041A/043A, BES# and OE# share pin 32.
BEF#
Flash Memory Bank Enable To activate the Flash memory bank when BEF# is low.
OE#
Output Enable
To gate the data output buffers.
Note: For SST31LF041A/043A, BES# and OE# share pin 32.
WE#
Write Enable
To control the Write operations.
VDD
Power Supply
3.0-3.6V Power Supply
VSS
Ground
1. AMS = Most significant address
T2.11 349
©2001 Silicon Storage Technology, Inc.
6
S71107-03-000 5/01 349
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