SST45LF010 查看數據表（PDF） - Silicon Storage Technology
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SST45LF010 Datasheet PDF : 16 Pages
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1 Mbit Serial Flash
SST45LF010
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range
Commercial
Ambient Temp
0°C to +70°C
VDD
3.0-3.6V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 3 and 4
TABLE 5: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V
Limits
Symbol Parameter
Min
Max
IDD
Active VDD Current
Read
20
Program and Erase
30
ISB
ILI
ILO
IIL
VIL
VIH
VIHC
VOL
VOH
Standby VDD Current
Input Leakage Current
Output Leakage Current
Input Low Current1
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
15
1
1
360
0.8
0.7 VDD
VDD-0.3
0.2
VDD-0.2
1. This parameter only applies to WP# and RST# pins.
Units
mA
mA
µA
µA
µA
µA
V
V
V
V
V
Test Conditions
SCK input=VILT/VIHT at f=10 MHz Max
CE#=VIL, VDD=VDD Max
CE#=VIL, VDD=VDD Max
CE#=VIHC, VDD=VDD Max
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
WP#, RST#=GND
VDD=VDD Min
VDD=VDD Max
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
T5.4 372
©2003 Silicon Storage Technology, Inc.
6
S71128-04-000 3/03 372
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