SST49LF004C 查看數據表（PDF） - Silicon Storage Technology

零件编号

产品描述 (功能)

生产厂家

SST49LF004C

4 Mbit / 8 Mbit LPC Serial Flash

Silicon Storage Technology 

Advance Information

scheme. The PDA can be also used to store system con-

figuration data (EEPROM replacement). The

SST49LF00xC also provides general purpose inputs (GPI)

for system design flexibility.

The SST49LF00xC flash memory device is manufactured

with SST’s proprietary, high-performance SuperFlash tech-

nology. The split-gate cell design and thick-oxide tunneling

injector attain greater reliability and manufacturability com-

pared with alternative technology approaches. The

SST49LF00xC device significantly improves performance

and reliability, while lowering power consumption. The

SST49LF00xC device writes (Program or Erase) in-system

with a single 3.0-3.6V power supply. It uses less energy

during Erase and Program than alternative flash memory

technologies.

The total energy consumed is a function of the applied volt-

age, current and time of application. Since for any given

voltage range, the SuperFlash technology uses less cur-

rent to program and has a shorter erase time, the total

energy consumed during any Erase or Program operation

is less than alternative flash memory technologies.

The SuperFlash technology provides fixed Erase and Pro-

gram time, independent of the number of Erase/Program

cycles that have performed. Therefore the system software

or hardware does not have to be calibrated or correlated to

4 Mbit / 8 Mbit LPC Serial Flash

SST49LF004C / SST49LF008C

the cumulative number of erase cycles as is necessary with

alternative flash memory technologies, whose Erase and

Program time increase with accumulated Erase/Program

cycles. To protect against inadvertent write, the

SST49LF00xC device has on-chip hardware and software

write protection schemes. It is offered with a typical endur-

ance of 100,000 cycles. Data retention is rated at greater

than 100 years.

The SST49LF00xC product provides a maximum program

time of 10 µs per byte with a single-byte Program opera-

tion; effectively 5 µs per byte with a dual-byte Program

operation and 2.5 µs per byte with a quad-byte Program

operation. End-of-Write can be detected by the RY/BY# pin

output in AAI mode and by reading the software status reg-

ister during an in-system Program or Erase operation.

The SST49LF00xC is offered in 32-PLCC, and 32-TSOP

packages. In addition, the SST49LF00xC devices are

offered in lead-free (non-Pb) package options to address

the growing need for non-Pb solutions in electronic compo-

nents. Non-Pb package versions can be obtained by order-

ing products with a package code suffix of “E” as the

environmental attribute in the product part number. See

Figures 3 and 4 for pin assignments and Table 1 for pin

descriptions.

©200 Silicon Storage Technology, Inc.

2

S71292-00-000

1/06

Share Link: