ST10F166
4 FLASH MEMORY
The ST10F166 provides, in addition to the RAM, 32 k bytes of Electrically Erasable
and reprogram-mable non-volatile (FLASH) memory. This memory is organised as
8K x 32 bit allowing a complete instruction to be read during one instruction fetch cy-
cle. Data values stored can be read as 16 bit operands using all addressing modes of
ST10F166 instruction set.
The FLASH memory is located in segment 0 (0 to 07FFFh) during reset, and thus
contains the reset and interrupt vectors. To provide full flexibility in the use of the
ST10F166, the FLASH memory may be remapped to segment ~ ( 0000 to 17FFFh)
during initialization. This allows the interrupt vector to be programmed from external
memory, while retaining the common routines and constants programmed into the
FLASH memory.
For ease of program updating, the FLASH memory is organised into 4 banks, each of
which may be independently Erased.
Table 2. FLASH memory Bank Organisation
Bank
0
1
2
3
Addresses
(Segment 0)
00000h to 02FFFh
03000h to 05FFFh
06000h to 077FFh
07800h to 07FFFh
Size
(bytes)
12K
12K
6K
2K
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