ST1S30 查看數據表（PDF） - STMicroelectronics

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ST1S30

3 A, 1.5 MHz PWM step-down switching regulator with synchronous rectification

STMicroelectronics 

ST1S30

Electrical characteristics

Refer to Figure 4 application circuit VIN_SW = VIN_A = VINH = 5 V, VO = 1.2 V, C1 = 10 µF, C2

= 22, C3 = 1 µF, L1 = 2.2 µH, TJ = -25 to 125 °C (unless otherwise specified. Typical values

are referred to 25 °C)

Table 7. Electrical characteristics for ST1S30I

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

FB

IFB

VI

OVP

Feedback voltage

VFB pin bias current

Minimum input voltage

Overvoltage protection

threshold

Overvoltage protection

hysteresis

IQ

Quiescent current

IO

Output current

VINH Inhibit threshold

IINH Inhibit pin current

%VO/ΔVI Output line regulation

784 800

IO = 10 mA to 2 A

VO rising

2.7

1.05 VO 1.1 VO

VO falling

5

VINH > 1.2 V, not switching

1.5

VINH < 0.0 V, T = - 30 °C to 85 °C

VI = 2.7 to 5.5 V (1)

3

Device ON, VI = 2.7 to 5.5 V

1.3

Device ON, VI = 2.7 to 5 V

1.2

Device OFF

VI = 2.7 V to 5.5 V, IO = 100 mA (1)

0.16

%VO/ΔIO Output load regulation

IO = 10 mA to 2 A (1)

0.2

PWMfS PWM switching frequency

VFB = 0.65 V

1.2

1.5

DMAX Maximum duty cycle

80

87

RDSON-N NMOS switch on resistance ISW = 750 mA

0.1

RDSON-P PMOS switch on resistance

ISWL Switching current limitation

ISW = 750 mA

(1)

0.1

3.7

4.4

ν

Efficiency (1)

IO = 10 mA to 100 mA, VO = 3.3 V 65

IO = 100 mA to 3 A, VO = 3.3 V

85

TSHDN Thermal shutdown

150

THYS Thermal shutdown hysteresis

20

%VO/ΔIO Load transient response

IO = 100 mA to 1 A, TA = 25 °C

tR = tF ≥ 200 ns (1)

-10

%VO/ΔIO

Short circuit removal response

IO = 10 mA to IO = short,

TA = 25 °C (1)

-10

1. Guaranteed by design, but not tested in production.

816 mV

600 nA

V

V

%

2.5 mA

1

µA

A

V

0.4

2

µA

%VO/

ΔVI

0.6

%VO/

ΔIO

1.8 MHz

%

Ω

Ω

5.1 A

%

°C

°C

+10 %VO

+10 %VO

Doc ID 17927 Rev 1

7/11

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