ST333S04PFL0P 查看數據表（PDF） - Vishay Semiconductors
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ST333S04PFL0P Datasheet PDF : 9 Pages
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ST333SP Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 330 A
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage VR
Voltage before turn-on VD
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
ITM
180° el
840
600
650
450
430
230
140
60
50
VDRM
50
50
75
10/0.47
ITM
180° el
1280
1040
1280
910
1090
730
490
250
50
VDRM
-
50
75
10/0.47
ITM
100 µs
5430
4350
2150
1560
1080
720
400
190
50
VDRM
-
50
75
10/0.47
UNITS
A
V
A/µs
°C
Ω/µF
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state
current at case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
I2√t
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
DC at 63 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
ITM = 1810 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
VALUES
330
75
518
11 000
11 520
9250
9700
605
550
430
390
6050
UNITS
A
°C
A
kA2s
kA2√s
1.96
0.91
V
0.92
0.58
mΩ
0.58
600
mA
1000
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94377
Revision: 30-Apr-08
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