ST333S04PFL0P 查看數據表（PDF） - Vishay Semiconductors
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ST333S04PFL0P Datasheet PDF : 9 Pages
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ST333SP Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 330 A
320
300
I TM
=
500 A
300 A
280
200 A
100 A
260
50 A
240
220
200
180
160
140
ST333S Series
TJ= 125 °C
120
100
80
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
Fig. 9 - Reverse Recovered Charge Characteristics
1E4
180
ITM = 500 A
160
300 A
200 A
140
100 A
50 A
120
100
80
60
ST333S Series
TJ = 125 °C
40
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
Fig. 10 - Reverse Recovery Current Characteristics
1E3
1E2
1000
1500
2000
2500
3000
500 400 200 100 50 Hz
Snubb er circ uit
Rs = 10 ohms
Cs = 0.47 µF
VD = 80%VDRM
5000
1E1
1E1
1E2
ST333SSeries
Sinusoidal pulse
tp
TC = 50°C
1E3
1E14E4
1E11E1
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
1000
1500
2000
2500
3000
400 200 100 50 Hz
500
Snubb er circuit
Rs = 10 ohms
Cs = 0.47 µF
VD = 80%VDRM
ST333SSeries
Sinusoida l pulse
tp
TC = 75°C
1E2
1E3
1E4
Pulse Basewidth (µs)
1E4
1E3
1E2
1E1
1E1
1000
1500
2000
2500
3000
400
500
200 100 50 Hz
Snub b er circ uit
Rs = 10 ohms
Cs = 0.47 µF
V D = 80%VDRM
ST333SSeries
Trap ezoidal p ulse
TC = 50°C
di/ d t = 50A/ µs
1E2
1E3
Pulse Basewidth (µs)
1E14E4
1E11E1
Fig. 12 - Frequency Characteristics
1000
1500
2000
2500
3000
400 200 100 50 Hz
500
Snub ber c ircuit
Rs = 10 ohms
Cs = 0.47 µF
V D = 80%VDRM
ST333SSeries
Tra pezoidal pulse
TC = 75°C
di/ dt = 50A/µs
1E2
1E3
1E4
Pulse Basewidth (µs)
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Document Number: 94377
Revision: 30-Apr-08
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