ST333S04PFL0P 查看數據表（PDF） - Vishay Semiconductors
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ST333S04PFL0P Datasheet PDF : 9 Pages
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ST333SP Series
Inverter Grade Thyristors Vishay High Power Products
(Stud Version), 330 A
1E4
1E3
1E2
1E1
1E1
50 Hz
200 100
400
500
1000
1500
2000
Snub ber circ uit
Rs = 10 ohms
Cs = 0.47 µF
2500
V D = 80% VDRM
3000
ST333SSeries
Trapezoid al pulse
tp
TC = 50°C
di/ dt = 100A/ µs
1000
1500
2000
2500
3000
200
400
500
100 50 Hz
Snub ber c irc uit
Rs = 10 ohms
Cs = 0.47 µF
V D = 80%VDRM
ST333SSeries
Trapezoidal pulse
tp
TC = 75°C
di/ dt = 100A/ µs
1E2
1E3
Pulse Basewidth (µs)
1E14E4
1E11E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
1E5
1E4
1E3
1E2
1E1
1E1
20 joules p er pulse
5 10
3
2
1
0.5
0.3
0.2
ST333SSeries
Sinusoidal pulse
tp
1E2
1E3
Pulse Basewidth (µs)
1E14E4
ST333SSeries
Rectangular pulse
tp
d i/ dt = 50A/ µs
20 joulesp er pulse
10
5
3
2
1
0.5
0.4
0.3
0.2
1E11E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
Rec tangular gate pulse
a) Rec ommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/ dt : 10V, 10ohms
10 tr<=1 µs
(a )
(b)
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST333SSeries Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Document Number: 94377
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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