STP12NM50FP 查看數據表（PDF） - STMicroelectronics

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STP12NM50FP

N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

500

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1

µA

10 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±30V

± 100 nA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 50µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 6A

0.30 0.35 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =15V, ID = 6A

VDS =25V, f=1 MHz, VGS=0

5.5

S

1000

pF

250

pF

20

pF

Coss

(2)

eq .

Equivalent output

capacitance

VGS=0, VDS =0V to 400V

90

pF

td(on)

tr

Turn-on Delay Time

Rise Time

VDD = 250V, ID = 6A,

RG = 4.7Ω, VGS = 10V

(see Figure 14)

20

ns

10

ns

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

Rg Gate input resistance

VDD=400V, ID = 12A

VGS =10V

(see Figure 15)

f=1MHz Gate DC Bias=0

test signal level=20mV

open drain

28 39 nC

8

nC

18

nC

1.6

Ω

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

inceases from 0 to 80% VDSS

4/17

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