STF9NK60ZD(2004) 查看數據表（PDF） - STMicroelectronics
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STF9NK60ZD
(Rev.:2004)
(Rev.:2004)
STMicroelectronics
STF9NK60ZD Datasheet PDF : 12 Pages
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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤7A, di/dt ≤500A/µs, VDD ≤ V(BR)DSS, Tj = 25°C
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-pcb
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Value
TO-220 / D2PAK
600
600
± 30
7
4.3
28
125
1
4000
15
-
TO-220FP
7 (*)
4.3 (*)
28 (*)
30
0.24
2500
-55 to 150
TO-220
D2PAK
30
1
TO-220FP
4.16
62.5
300
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
Unit
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
7
A
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
235
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
Min.
BVGSO Gate-Source Breakdown Igs=± 1mA (Open Drain)
30
Voltage
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
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