STD1NC60 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STD1NC60 Datasheet PDF : 9 Pages
| |||
STD1NC60
N-CHANNEL 600V - 7Ω - 1.4A - DPAK/IPAK
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STD1NC60
600 V
<8Ω
1.4 A
s TYPICAL RDS(on) = 7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
IPAK
TO-251
3
2
1
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM (1)
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
December 2000
Value
Unit
600
V
600
V
±30
V
1.4
A
0.9
A
5.6
A
35
W
0.28
W/°C
3.5
V/ns
–65 to 150
°C
150
°C
(1)ISD ≤1.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
Share Link: 