STD13003Q 查看數據表（PDF） - AUK -> KODENSHI CORP

零件编号

产品描述 (功能)

生产厂家

STD13003Q

NPN Silicon Power Transistor

AUK -> KODENSHI CORP 

Absolute Maximum Ratings

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

PC

Tj

Tstg

STD13003Q

Ratings

700

400

9

1.5

3

0.75

1.1

150

-55~150

(Ta=25℃)

Unit

V

V

V

A

A

A

W

°C

°C

Electrical Characteristics

Characteristic

Symbol

Test Condition

Collector-emitter sustaining voltage VCE(sus) IC=5mA, IB=0

Collector cut-off current

ICBO

VCB=700V, IE=0

Emitter cut-off current

IEBO

VEB=9V, IC=0

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

hFE*

VCE(sat)*

VBE(sat)*

IC=0.5A, VCE=2V

IC=1A, VCE=2V

IC=0.5A, IB=0.1A

IC=1A, IB=0.25A

IC=1.5A, IB=0.5A

IC=0.5A, IB=0.1A

IC=1A, IB=0.25A

Transition frequency

Output capacitance

fT

VCB=10V, IC=0.1A, f=1MHz

Cob

VCB=10V, IE=0, f=0.1MHz

Turn on Time

ton

Storage Time

tstg

Fall Time

tf

<

* Pulse test: PW≤300 ㎲, Duty cycle≤2% Pulse

(Ta=25℃)

Min. Typ. Max. Unit

400

-

-

V

-

-

10

uA

-

-

10

uA

8

-

40

5

-

-

-

-

0.5

-

-

1

V

-

-

3

-

-

1

V

-

-

1.2

4

-

-

MHz

-

13

-

pF

-

-

0.5

-

-

4

㎲

-

-

0.7

KSD-T0A012-000

2

Share Link: