STD3NK60Z-1(2018) 查看數據表（PDF） - STMicroelectronics

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STD3NK60Z-1
(Rev.:2018)

N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages

STMicroelectronics 

STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4

STP3NK60Z, STP3NK60ZFP

Datasheet

N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in

D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages

TAB

13

D2PAK

TAB

TAB

TAB

23

1

DPAK

IPAK

3

12

1 23

TO-220

123

TO-220FP

D(2, TAB)

G(1)

Features

Order codes

VDS

RDS(on) max.

STB3NK60ZT4

STD3NK60Z-1

STD3NK60ZT4

600 V

3.6 Ω

STP3NK60Z

STP3NK60ZFP

• Extremely high dv/dt capability

• 100% avalanche tested

• Gate charge minimized

• Very low intrinsic capacitance

• Zener-protected

ID

2.4 A

Package

D2PAK

IPAK

DPAK

TO-220

TO-220FP

Applications

S(3)

AM01475V1

• Switching applications

Product status link

STB3NK60ZT4

STD3NK60Z-1

STD3NK60ZT4

STP3NK60Z

STP3NK60ZFP

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs

developed using the SuperMESH™ technology by STMicroelectronics, an

optimization of the well-established PowerMESH™. In addition to a significant

reduction in on-resistance, these devices are designed to ensure a high level of dv/dt

capability for the most demanding applications.

DS2912 - Rev 6 - August 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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