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零件编号
产品描述 (功能)
D888 查看數據表(PDF) - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
D888
HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR
STMicroelectronics
D888 Datasheet PDF : 6 Pages
1
2
3
4
5
6
STD888
THERMAL DATA
R
thj-case
•
Thermal Resistance Junction-Case
Max
8.33
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -30 V
V
CB
= -30 V
T
j
= 100
o
C
I
EBO
V
(BR)CEO
∗
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
∗
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
Collector-Base
Breakdown Voltage
(I
E
= 0)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
V
EB
= -6 V
I
C
= -10 mA
I
C
= -100
µ
A
I
E
= -100
µ
A
I
C
= -500 mA
I
C
= -2 A
I
C
= -5 A
I
C
= -6 A
I
C
= -8 A
I
C
= -10 A
I
B
= -5 mA
I
B
= -50 mA
I
B
= -250 mA
I
B
= -250 mA
I
B
= -400 mA
I
B
= -500 mA
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
I
C
= -2 A
I
C
= -6 A
I
B
= -50 mA
I
B
= -250 mA
h
FE
∗
DC Current Gain
I
C
= -10 mA
I
C
= -500 mA
I
C
= -5 A
I
C
= -5 A
T
j
= 100
o
C
I
C
= -8 A
I
C
= -10 A
V
CE
= -1 V
V
CE
= -1 V
V
CE
= -1 V
V
CE
= -1V
V
CE
= -1 V
V
CE
= -1 V
RESISTIVE LOAD
I
C
= -3 A
I
B1
= - I
B2
= -60 mA
t
d
Delay Time
V
CC
= -20 V
(see figure 1)
t
r
RiseTime
t
s
StorageTime
t
f
Fall Time
∗
Pulsed: Pulse duration = 300
µ
s, duty cycle
≤
1.5 %
Min. Typ.
-30
-60
-6
150 200
150 200
75 100
75 100
40
55
15
35
180
160
250
80
Max.
-10
-1
-10
-0.15
-0.25
-0.70
-0.70
-1
-1.5
-1.1
-1.4
300
220
210
300
100
Unit
nA
µ
A
nA
V
V
V
V
V
V
V
V
V
V
V
ns
ns
ns
ns
2/6
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