STD90NH02L(2003) 查看數據表（PDF） - STMicroelectronics

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STD90NH02L
(Rev.:2003)

N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD90NH02L

N-CHANNEL 24V - 0.0052 Ω - 60A DPAK/IPAK

STripFET™ III POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STD90NH02L

24 V < 0.006 Ω 60 A(2)

s TYPICAL RDS(on) = 0.0052 Ω @ 10 V

s TYPICAL RDS(on) = 0.007 Ω @ 5 V

s RDS(ON) * Qg INDUSTRY’s BENCHMARK

s CONDUCTION LOSSES REDUCED

s SWITCHING LOSSES REDUCED

s LOW THRESHOLD DEVICE

s THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

s SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

The STD90NH02L utilizes the latest advanced design

rules of ST’s proprietary STripFET™ technology. This is

suitable fot the most demanding DC-DC converter

application where high efficiency is to be achieved.

APPLICATIONS

s SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC CONVERTES

3

2

1

IPAK

TO-251

(Suffix “-1”)

3

1

DPAK

TO-252

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Vspike(1) Drain-source Voltage Rating

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID(2)

Drain Current (continuous) at TC = 25°C

ID(2)

Drain Current (continuous) at TC = 100°C

IDM(3) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

EAS (4) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

September 2003

Value

30

24

24

± 20

60

60

240

95

0.63

600

-55 to 175

Unit

V

V

V

V

A

A

A

W

W/°C

mJ

°C

1/12

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