STN817A 查看數據表（PDF） - STMicroelectronics
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STN817A Datasheet PDF : 9 Pages
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STF817A - STN817A
2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test Conditions
IECS
ICEO
IEBO
VCEO(sus)
Note 2
Collector Cut-off Current
(VBE=0)
VCE = -80 V
Collector Cut-off Current
(IB=0)
VCE = -80 V
Emitter Cut-off Current (IC = 0) VEB = -5V
Collector-Emitter Sustaining
Voltage (IB = 0)
IC=-10mA
VCE(sat)
Note 2
VBE(sat)
Note 2
Collector-Emitter Saturation
Volatge
Base-Emitter Saturation
Volatge
hFENote 2 DC Current Gain
fT
Transition Frequency
IC= -100 mA, IB= -10m A
IC= -1 A, IB= -100m A
IC= -100 mA, IB= -10m A
IC= -1 A, IB= -100m A
IC= -100 mA, VCE = -2V
IC= -500 mA, VCE = -2V
IC= -1A, VCE = -2V
IC= -0.1A, VCE = -10V
(1) Device mounted on a PCB area of 1 cm²
(2) Pulsed: Pulse duartion = 300µs, duty cycle 1.5%
Min.
Typ.
Max.
-500
Unit
µA
-1
mA
-100
µA
-80
V
-0.25
V
-0.5
V
-1
V
-1.1
V
140
80
30
50
MHz
3/9
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