STK16C88-3 查看數據表（PDF） - Unspecified
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STK16C88-3 Datasheet PDF : 11 Pages
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STK16C88-3
SRAM READ CYCLES #1 & #2
SYMBOLS
NO.
#1, #2
Alt.
PARAMETER
1
tELQV
2
tAVAVf
3
tAVQVg
tACS
tRC
tAA
4
tGLQV
tOE
5
tAXQXg
tOH
6
tELQX
tLZ
7
tEHQZh
tHZ
8
tGLQX
tOLZ
9
tGHQZh
tOHZ
10
tELICCHe
tPA
11
tEHICCLd, e
tPS
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold after Address Change
Chip Enable to Output Active
Chip Disable to Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
Note f: W must be high during SRAM READ cycles and low during SRAM WRITE cycles.
Note g: I/O state assumes E, G < VIL and W > VIH; device is continuously selected.
Note h: Measured + 200mV from steady state output voltage.
SRAM READ CYCLE #1: Address Controlledf, g
ADDRESS
DQ (DATA OUT)
5
tAXQX
2
tAVAV
3
tAVQV
DATA VALID
SRAM READ CYCLE #2: E Controlledf
ADDRESS
E
6
tELQX
2
tAVAV
1
tELQV
(VCC = 3.0V-3.6V)
STK16C88-3-35
MIN
MAX
35
35
35
15
5
5
13
0
13
0
35
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
11
tEHICCL
7
tEHQZ
G
DQ (DATA OUT)
ICC
4
8 tGLQV
tGLQX
10
tELICCH
STANDBY
ACTIVE
9
tGHQZ
DATA VALID
March 2006
3 Document Control # ML0019 rev 0.2
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