STP5NC70Z 查看數據表（PDF） - STMicroelectronics
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STP5NC70Z
STMicroelectronics
STP5NC70Z Datasheet PDF : 12 Pages
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STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 350 V, ID = 2.5 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 560V, ID = 5A,
VGS = 10V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 560V, ID = 5 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
22
10
Max.
Unit
ns
ns
27
36.4
nC
8
nC
10
nC
Min.
Typ.
13
14
22
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
Source-drain Current
4.6
A
ISDM (2) Source-drain Current (pulsed)
18.4
A
VSD (1) Forward On Voltage
ISD = 4.6 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 5 A, di/dt = 100A/µs, VDD
570
ns
Qrr
Reverse Recovery Charge
= 100V, Tj = 150°C
(see test circuit, Figure 5)
4.4
µC
IRRM
Reverse Recovery Current
15.5
A
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
αT
Voltage Thermal Coefficient
Rz
Dynamic Resistance
Test Conditions
Igs=± 1mA (Open Drain)
T=25°C Note(3)
ID = 50 mA, VGS = 0
Min.
25
Typ.
1.3
90
Max.
Unit
V
10-4/°C
Ω
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆VBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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