STU8NM50N 查看數據表（PDF） - STMicroelectronics

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STU8NM50N

N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packages

STMicroelectronics 

STD8NM50N, STP8NM50N, STU8NM50N

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Test conditions

VDD = 250 V, ID = 5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

Min.

-

Typ.

7

4.4

25

8.8

Max Unit

ns

ns

-

ns

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 5 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 20)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 20)

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min.

-

-

-

-

Typ.

187

1.3

14

224

1.5

13

Max. Unit

5A

20 A

1.5 V

ns

µC

A

ns

µC

A

Doc ID 17413 Rev 6

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