S15H100CH 查看數據表（PDF） - STMicroelectronics
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S15H100CH Datasheet PDF : 8 Pages
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STPS15H100C
Characteristics
Figure 1. Conduction losses versus average Figure 2. Average forward current versus
current
ambient temperature (δ = 0.5)
PF(av)(W)
7
IF(av)(A)
9
6
δ = 0.5
8
Rth(j-a)=Rth(j-c)
5
δ = 0.2
δ = 0.1
4
δ = 0.05
7
δ=1
6
5
3
4
3
Rth(j-a)=70°C/W
2
T
2
T
1
IF(av)(A)
δ=tp/T
tp
1
δ=tp/T
tp
0
0
0
1
2
3
4
5
6
7
8
9
0
25
50
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
0.01
0.1
tp(µs)
1
10
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values)
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
1.E-01
δ=tp/T
tp
1.E+00
3/8
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