STPS20H100 查看數據表（PDF） - STMicroelectronics
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STPS20H100 Datasheet PDF : 7 Pages
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STPS20H100CT/CF/CG/CG-1
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
TO-220AB / D2PAK / I2PAK
ISOWATT220AB
TO-220AB / D2PAK / I2PAK
ISOWATT220AB
TO-220AB / D2PAK / I2PAK
ISOWATT220AB
Per diode
Per diode
Total
Total
Coupling
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
1.6
4
0.9
3.2
0.15
2.5
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR * Reverse leakage current
VF ** Forward voltage drop
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
Tests conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 8 A
Tj = 25°C
IF = 10 A
Tj = 25°C
IF = 16 A
Tj = 25°C
IF = 20 A
Tj = 125°C IF = 8 A
Tj = 125°C IF = 10 A
Tj = 125°C IF = 16 A
Tj = 125°C IF = 20 A
To evaluate the maximum conduction losses use the following equation :
P = 0.55 x IF(AV) + 0.009 x IF2(RMS)
Min. Typ. Max. Unit
4.5
µA
2
6
mA
0.71 V
0.77
0.81
0.88
0.56 0.58
0.59 0.64
0.65 0.68
0.67 0.73
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
8
δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5
6
δ =1
4
2
0
0
2
2/7
IF(av) (A)
4
6
8
T
δ=tp/T
10
tp
12
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(av)(A)
12
10
8
Rth(j-a)=15°C/W
Rth(j-a)=40°C/W
6
Rth(j-a)=Rth(j-c)
TO220AB
ISOWATT220AB
4
2
Tamb(°C)
0
0
25 50 75 100 125 150 175
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