STPS20H100 查看數據表（PDF） - STMicroelectronics
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STPS20H100 Datasheet PDF : 7 Pages
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STPS20H100CT/CF/CG/CG-1
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB, D2PAK, I2PAK)
Fig. 4: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB).
IM(A)
200
180
160
140
120
100
80
60
40 IM
20
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Tc=50°C
Tc=75°C
Tc=125°C
1E+0
IM(A)
140
120
100
80
60
40
IM
20
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Tj=50°C
Tj=75°C
Tj=125°C
1E+0
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(TO-220AB, D2PAK, I2PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
tp(s)
1E-2
T
1E-1
δ=tp/T
tp
1E+0
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOWATT220AB).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-2
tp(s)
1E-1
1E+0
1E+1
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(µA)
1E+4
1E+3
1E+2
1E+1
Tj=150°C
Tj=125°C
Tj=100°C
1E+0
1E-1
1E-2
0
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80 90 100
C(pF)
1000
500
200
100
1
2
F=1MHz
Tj=25°C
VR(V)
5
10 20
50 100
3/7
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