STPS20L45CG-TR 查看數據表（PDF） - STMicroelectronics
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STPS20L45CG-TR Datasheet PDF : 9 Pages
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STPS20L45CF/CW/CT/CFP/CG
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(mA)
2E+2
1E+2
Tj=150°C
1E+1
Tj=125°C
1E+0
1E-1
1E-2
1E-3
0
Tj=75°C
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40 45
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
2000
1000
F=1MHz
Tj=25°C
100
1
2
VR(V)
5
10
20
50
Fig. 9: Forward voltage drop versus forward
current (maximum values) (per diode).
IFM(A)
100.0
Typical values
Tj=150°C
10.0
Tj=125°C
1.0
Tj=25°C
Tj=75°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed cir-
cuit board FR4, copper thickness: 35µm) (D2PAK).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
S(Cu) (cm²)
0
0 4 8 12 16 20 24 28 32 36 40
4/9
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