STPS20170C 查看數據表（PDF） - STMicroelectronics
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STPS20170C Datasheet PDF : 8 Pages
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STPS20170C
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward voltage
IF(AV)
Average forward current
δ = 0.5
TO-220AB /
D2PAK / I2PAK
TO-220FPAB
Tc = 155°C
Tc = 135°C
Per diode
Per device
Per diode
Per device
IFSM Surge non repetitive forward current
tp = 10ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Tstg Storage temperature range
Tj Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
*
:
d----P-----t--o----t
dTj
<
-R----t--h----(-1--j--–-----a----)
thermal
runaway
condition
for
a
diode
on
its
own
heatsink
Value
170
30
10
20
10
20
180
6700
-65 to + 175
175
10000
Unit
V
A
A
A
W
°C
°C
V/µs
Table 4: Thermal Parameters
Symbol
Parameter
Rth(j-c) Junction to case
TO-220AB / D2PAK / I2PAK
TO-220FPAB
Rth(c)
TO-220AB / D2PAK / I2PAK
TO-220FPAB
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Per diode
Total
Per diode
Total
Coupling
Value
2.2
1.3
4.5
3.5
0.3
2.5
Unit
°C/W
Table 5: Static Electrical Characteristics (per diode)
Symbol
Parameter
Tests conditions
IR *
Tj = 25°C
Reverse leakage current
Tj = 125°C
VR = VRRM
VF ** Forward voltage drop
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 10A
IF = 20A
Min. Typ
0.69
0.79
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF2(RMS)
Max.
15
15
0.90
0.75
0.99
0.86
Unit
µA
mA
V
2/8
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