STPS20170C 查看數據表（PDF） - STMicroelectronics
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STPS20170C Datasheet PDF : 8 Pages
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STPS20170C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W)
10
9
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
8
7
δ=1
6
5
4
3
T
2
1
IF(AV)(A)
δ=tp/T
tp
0
0
1
2
3
4
5
6
7
8
9 10 11 12
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
IF(AV)(A)
12
11
Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK and D2PAK)
10
9
Rth(j-a)=Rth(j-c) (TO-220FPAB)
8
7
Rth(j-a)=15°C/W
6
5
4
3
T
2
1
δ=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
175
Figure 3: Normalized avalanche
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
power
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
Figure 4: Normalized avalanche
derating versus junction temperature
PARM(tp)
PARM(25°C)
1.2
power
1
0.8
0.6
0.4
0.2
Tj(°C)
0
25
50
75
100
125
150
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, D2PAK, I2PAK)
IM(A)
150
125
100
75
50
IM
25
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=50°C
TC=75°C
TC=125°C
1.E+00
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
IM(A)
100
90
80
70
60
TC=50°C
50
40
TC=75°C
30
20
IM
10
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=125°C
1.E+00
3/8
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