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STPS30100ST(2018) 查看數據表(PDF) - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STPS30100ST
(Rev.:2018)
100 V power Schottky rectifier
STMicroelectronics
STPS30100ST Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
STPS30100ST
Characteristics (curves)
Figure 5.
Reverse leakage current versus reverse voltage
applied (typical values)
Figure 6.
Junction capacitance versus reverse voltage
applied (typical values)
1.E+03
IR(mA)
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
Tj = 25 °C
1.E-03
1.E-04
0
10 20 30 40 50 60 70 80
VR(V)
90 100
C(pF)
10000
1000
100
1
F = 1 MHz
Vosc = 30 mV
Tj = 25 °C
VR(V)
10
100
Figure 7.
Forward voltage drop versus forward current
(low level)
30
IF(A)
25
20
15
10
5
0
0.0
Tj = 125 °C
(Maximum values)
Tj = 125 °C
(Typical values)
0.2
0.4
Tj = 25 °C
(Maximum values)
0.6
0.8
VF(V)
1.0
Figure 8.
Forward voltage drop versus forward current
(high level)
200
IF(A)
180
160
140
Tj = 125 °C
(Maximum values)
120
100
80
Tj = 125 °C
(Typical values)
60
Tj = 25 °C
(Maximum values)
40
20
0
VF(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
DS5095
-
Rev 2
page 4/9
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