STPS640 查看數據表（PDF） - STMicroelectronics
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STPS640 Datasheet PDF : 6 Pages
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STPS640CT/CF/CB
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Parameter
TO-220AB/ DPAK
ISOWATT220AB
Rth(c) Coupling
TO-220AB
ISOWATT220AB
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Per diode
Total
Per diode
Total
Value
5.5
3
7.5
5.2
0.5
3
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Pulse test :
Tests Conditions
Reverse leakage current Tj = 25°C
Tj = 125°C
Forward voltage drop
Tj = 25°C
Tj = 25°C
Tj = 125°C
* tp = 380 µs, δ < 2%
Tj = 125°C
Min.
VR = VRRM
IF = 3 A
IF = 6 A
IF = 3 A
IF = 6 A
Typ.
2
0.5
0.67
Max.
100
10
0.63
0.84
0.57
0.72
To evaluate the maximum conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.050 IF2(RMS)
Unit
µA
mA
V
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
2.50
2.25
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
2.00
1.75
δ=1
1.50
1.25
1.00
0.75
T
0.50
0.25
IF(av) (A)
δ=tp/T
tp
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 2: Average current versus ambient temperature
(δ = 0.5, per diode).
IF(av)(A)
4.0
3.5
3.0
2.5
2.0
1.5
T
1.0
0.5 δ=tp/T
tp
0.0
0
25
Rth(j-a)=Rth(j-c)
TO-220AB/DPAK
ISOWATT220AB
Rth(j-a)=15°C/W
Tamb(°C)
50
75
100 125 150
2/6
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