STPS640 查看數據表（PDF） - STMicroelectronics
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STPS640 Datasheet PDF : 6 Pages
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Fig. 3-1: Non repetitive surge peak forward current
versus overload duration.
(Maximum values, per diode) (TO-220AB/ DPAK).
STPS640CT/CF/CB
Fig. 3-2: Non repetitive surge peak forward current
versus overload duration.
(Maximum values, per diode) (ISOWATT220AB).
IM(A)
45
40
35
30
25
20
15
10
IM
5
t
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=135°C
1E+0
IM(A)
40
35
30
25
20
15
10 IM
5
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=130°C
1E+0
Fig. 4.1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(TO-220AB / DPAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
T
1E-2
tp(s)
δ=tp/T
1E-1
tp
1E+0
Fig. 4-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(ISOWATT220AB).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2
δ = 0.2
δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(A)
1E-2
Tj=150°C
1E-3
Tj=125°C
Tj=100°C
1E-4
Tj=75°C
C(pF)
500
100
F=1MHz
Tj=25°C
VR(V)
1E-5
10
0 5 10 15 20 25 30 35 40
1
2
VR(V)
5
10
20
50
3/6
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