STPS40120CT(2006) 查看數據表（PDF） - STMicroelectronics
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STPS40120CT Datasheet PDF : 8 Pages
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STPS40120C
Characteristics
Figure 1.
Average forward power
dissipation versus average
forward current (per diode)
PF(AV)(W)
20
18
16
δ = 0.2
14
δ = 0.1
12
δ = 0.05
10
8
6
4
2
IF(AV)(A)
0
0
2
4
6
8 10 12 14
δ = 0.5
δ=1
T
δ=tp/T
tp
16 18 20 22 24
Figure 2.
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
IF(AV)(A)
22
20
18
16
14
12
10
8
6
T
4
2
δ=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
tp(µs)
0.2
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
IM(A)
240
220
200
180
160
140
120
100
80
60
40 IM
20
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
0.3 δ = 0.2
δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
T
tp(s)
1.E-01
δ=tp/T
tp
1.E+00
3/8
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