STPS40100C2FSY1 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STPS40100C2FSY1 Datasheet PDF : 9 Pages
| |||
Characteristics
1
Characteristics
STPS40100HR
Table 2. Absolute maximum ratings
Symbol
Characteristic
Value
Unit
IFSM
Forward surge current (per diode)(1)
300
A
VRRM Repetitive peak reverse voltage(2)
100
V
IRRM
Repetitive peak reverse current(3)
1
A
Average output rectified current (50% duty cycle):(4), (5)
IO
per diode
per device
20
A
40
IF(RMS)
TOP
Forward rms current (per diode)
Operating temperature range(6)
(case temperature)
30
A
-65 to +175
°C
TJ
TSTG
TSOL
Junction temperature
Storage temperature range(6)
Soldering temperature:
For TO-254(7)
+175
°C
-65 to +175
°C
°C
+260
dV/dt Critical rate of rise of reverse voltage
10000
V/µs
1. Sinusoidal pulse of 10 ms duration
2. Pulsed, duration 5 ms, F = 50 Hz
3. Pulsed, duration 2 µs, F = 1 kHz
4. For Tcase ≥ +132°C per device and Tcase ≥ +148°C per diode, derate linearly to 0 A at +175°C.
5. The “per device” ratings apply only when both anode terminals are tied together.
6. For devices with hot solder dip lead finish all testing performed at Tamb > +125 °C are carried out in a 100%
inert atmosphere.
7. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
Table 3. Thermal resistance
Symbol
Characteristic
Rth(j-c) (1)
Thermal resistance, junction to case
per diode
per device
1. Package mounted on infinite heatsink
Value
1.5
1.2
Unit
°C/W
2/9
Doc ID 17306 Rev 1
Share Link: 