STS12NH3LL 查看數據表（PDF） - STMicroelectronics
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STS12NH3LL
STMicroelectronics
STS12NH3LL Datasheet PDF : 7 Pages
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STS12NH3LL
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS= 0)
VDGR
Drain-gate Voltage (RGS= 20 kΩ)
VGS
Gate-source Voltage
ID
Drain Current (continuous) at TC= 25°C
ID
Drain Current (continuous) at TC= 100°C
IDM ( ) Drain Current (pulsed)
Ptot
Total Dissipation at TC= 25°C
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-amb (#) Thermal Resistance Junction-ambient
(#) When Mounted on 1 inch² FR-4 board, 2 oz Cu (t ≤ 10 sec.)
Value
30
30
± 16
12
7.5
48
2.5
– 55 to 150
50
Unit
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V(BR)DSS Drain-source Breakdown ID = 250 µA, VGS = 0
30
V
Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating, TC = 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
± 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
1
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 6 A
VGS = 4.5 V, ID = 6 A
0.008 0.0105 Ω
0.010
0.013
Ω
Table 6: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Test Conditions
VDS= 15V, ID= 6 A
VDS= 25V, f= 1 MHz, VGS= 0
Min.
Typ.
TBD
965
285
38
Max.
Unit
S
pF
pF
pF
2/7
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