STTA2512 查看數據表（PDF） - STMicroelectronics
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STTA2512 Datasheet PDF : 9 Pages
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STTA2512P / STTA5012TV1/2
THERMAL AND POWER DATA (per diode)
Symbol
Rth(j-c)
Rth(c)
P1
Pmax
Parameter
Junction to case thermal
resistance
Coupling thermal resistance
Conduction power dissipation
IF(AV) = 25A δ =0.5
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
ISOTOP
ISOTOP
SOD93
ISOTOP
ISOTOP
SOD93
ISOTOP
SOD93
Conditions
Per diode
Total
Coupling
Tc= 70°C
Tc= 82°C
Tc= 62°C
Tc= 75°C
Value
1.4
0.75
1.2
0.1
57
62.5
Unit
°C/W
°C/W
W
W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
VF * Forward voltage drop
IR ** Reverse leakage current
Vto
Rd
Test pulses :
Threshold voltage
Dynamic resistance
* tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
Test conditions
IF =25A
Tj = 25°C
Tj = 125°C
VR =0.8 x
VRRM
Tj = 25°C
Tj = 125°C
Ip < 3.IF(AV) Tj = 125°C
Min Typ Max Unit
2.1 V
1.3 1.9 V
150 µA
2.0 8 mA
1.52 V
15 mΩ
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + Rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
Parameter
trr
Reverse recovery
time
IRM Maximum reverse
recovery current
S factor Softness factor
Test conditions
Min Typ Max Unit
Tj = 25°C
IF = 0.5 A IR = 1A Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR =30V
ns
60
110
Tj = 125°C VR = 600V IF =25A
dIF/dt = -200 A/µs
dIF/dt = -500 A/µs
A
35
45
Tj = 125°C VR = 600V IF =25A
/
dIF/dt = -500 A/µs
1.2
TURN-ON SWITCHING
Symbol
Parameter
tfr
Forward recovery time
VFp Peak forward voltage
Test conditions
Min Typ Max Unit
Tj = 25°C
IF =25 A, dIF/dt = 200 A/µs
measured at 1.1 × VFmax
ns
900
Tj = 25°C
IF =25A, dIF/dt = 200 A/µs
IF =40A, dIF/dt = 500 A/µs
V
30
35
2/9
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