STTA2512P / STTA5012TV1/2
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values, per diode).
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
S factor
1.60
Tj=125°C
1.40
1.20
1.00
0.80
0
100
dIF/dt(A/µs)
200
300
1.1
IF<2*IF(av)
VR=600V
1.0
0.9
0.8
0.7
25
400
500
S factor
IRM
Tj(°C)
50
75
100
125
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode).
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
VFP(V)
60
IF=IF(av)
50
40
30
20
10
0
0
100
dIF/dt(A/µs)
200
300
Tj=125°C
400
500
tfr(ns)
1400
1200
1000
800
600
400
200
0
100
VFR=1.1*VF max.
IF=IF(av)
dIF/dt(A/µs)
200
300
Tj=125°C
400
500
4/9