STTA2512 查看數據表（PDF） - STMicroelectronics

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STTA2512

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

STMicroelectronics 

APPLICATION DATA (Cont’d)

Fig. F: TURN-OFF CHARACTERISTICS

V

IL

TRANSISTOR

I

t

STTA2512P / STTA5012TV1/2

Turn-on losses :

(in the transistor, due to the diode)

P5 = VR × IRM 2 × ( 3 + 2 × S ) × F

6 x dIF ⁄ dt

+ VR

×

IRM × IL × ( S + 2 ) × F

2 x dIF ⁄ dt

I

dI F /dt

DIODE

V

ta tb

t

I RM

dIR /dt

VR

trr = ta + tb S = tb / ta

I

dIF /dt = VR /L

RECTIFIER

OPERATION

V

ta tb

IRM

dI R /dt

trr = ta + tb

S = tb/ta

t

VR

Fig. G: TURN-ON CHARACTERISTICS

IF

dIF /dt

I Fmax

0

t

VF

V Fp

1.1V F

0

VF

t

tfr

Turn-off losses (in the diode) :

P3 = VR

× IRM 2 × S

6 x dIF ⁄ dt

×

F

Turn-off losses :

(with non negligible serial inductance)

P3’ = VR

× IRM 2 × S

6 x dIF ⁄ dt

×F +

L × IRM 2 × F

2

P3,P3’ and P5 are suitable for powerMOSFET and

IGBT

Turn-on losses :

P4 = 0.4 (VFP - VF) . IFmax . tfr . F

7/9

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