STTA306B 查看數據表（PDF） - STMicroelectronics

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STTA306B

TURBOSWITCH™ ULTRA-FAST HIGH VOLTAGE DIODE

STMicroelectronics 

STTA306B

THERMAL AND POWER DATA

Symbol

Rth (j-c)

P1

Parameter

Junction to case

Conduction power dissipation

Pmax

Total power dissipation

Pmax = P1 + P3

(P3 = 10% P1)

Tests conditions

IF(AV) = 1.5A, δ = 0.5

Tc = 110°C

Tc = 108°C

Value

6

2.5

2.8

Unit

°C/W

W

W

STATIC ELECTRICAL CHARACTERISTICS

Symbol

VF **

IR *

Vto

Rd

Test pulse :

Parameter

Forward voltage drop

Reverse leakage

current

Threshold voltage

Dynamic resistance

* tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

Tests conditions

Tj = 25°C IF = 3 A

Tj = 125°C IF = 3 A

Tj = 25°C VR = 0.8 X VRRM

Tj = 125°C

Ip < 3.IF(AV) Tj = 125°C

Min.

Typ.

1.3

500

Max.

1.85

1.65

20

1200

1.15

175

Unit

V

µA

V

mΩ

To evaluate the maximum conduction losses use the following equation :

P = Vto x IF(AV) + Rd x IF2(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

TURN-OFF SWITCHING

Symbol

trr

Parameter

IRM

Maximum reverse

recovery current

S factor Softness factor

Test conditions

Tj = 25°C

IF=0.5A IR=1A Irr=0.25A

IF=1A dIF/dt= -50A/µs

VR=30V

Tj = 125°C

IF=3A VR=400V

dIF/dt = -16A/µs

dIF/dt = -50A/µs

Tj = 125°C VR=400V IF=3A

dIF/dt = -50A/µs

Min. Typ. Max. Unit

20

ns

50

A

1.2

2.0

1.1

-

TURN-ON SWITCHING

Symbol

Parameter

tfr

Forward recovery

time

VFP

Peak forward

voltage

Tj = 25°C

Tj = 25°C

Test conditions

IF=3A dIF/dt = 16A/µs

Measured at 1.1 x VFmax

IF=2A dIF/dt = 16A/µs

Min. Typ. Max. Unit

500 ns

10 V

2/8

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