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STTA306B 查看數據表(PDF) - STMicroelectronics

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STTA306B Datasheet PDF : 8 Pages
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STTA306B
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
1.1
1.0
0.9
0.8
0.7
25
S factor
IRM
Tj(°C)
50
75
100
125
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence).
VFP(V)
24
22
IF=IF(av)
20
Tj=125°C
18
16
14
12
10
8
6
4
2
dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence).
tfr(ns)
300
250
200
IF=IF(av)
VFR=1.1*VF max.
Tj=125°C
150
100
50
dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
Fig. 10: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
10
F=1MHz
5
2
VR(V)
1
1
10
100 200
4/8

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