STTH16003 查看數據表（PDF） - STMicroelectronics
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STTH16003 Datasheet PDF : 7 Pages
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Characteristics
STTH16003
Figure 5. Reverse recovery time versus
Figure 6. Softness factor (tb/ta) versus dIF/dt
dIF/dt (90% confidence, per diode)
(typical values, per diode)
trr(ns)
240
220
200
180
160
140
120
100
80
60
40
20
0
0 50
IF=2xIF(av)
IF=IF(av)
VR=200V
Tj=125°C
IF=0.5xIF(av)
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
S factor
0.6
0.5
VR=200V
Tj=125°C
0.4
0.3
0.2
0.1
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 7.
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
Relative variation of dynamic
Figure 8.
parameters versus junction
temperature (reference: Tj = 125°C)
Transient peak forward voltage
versus dIF/dt (90% confidence, per
diode)
S factor
IRM
Tj(°C)
50
75
100
VFP(V)
8
7
IF=IF(av)
Tj=125°C
6
5
4
3
2
1
dIF/dt(A/µs)
0
125 0 50 100 150 200 250 300 350 400 450 500
Figure 9.
Forward recovery time versus dIF/dt (90% confidence, per diode)
tfr(ns)
1000
900
800
700
VFR=1.1 x VF max.
IF=IF(av)
Tj=125°C
600
500
400
300
200
100
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
4/7
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