STTH3010-Y 查看數據表（PDF） - STMicroelectronics
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STTH3010-Y Datasheet PDF : 9 Pages
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STTH3010-Y
Characteristics
Table 5.
Symbol
Dynamic characteristics
Parameter
trr Reverse recovery time
IRM Reverse recovery current
S Softness factor
tfr Forward recovery time
VFP Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25 °C
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25 °C
IF = 1 A, dIF/dt = -200 A/µs,
VR = 30 V, Tj = 25 °C
IF = 30 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125 °C
IF = 30 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125 °C
IF = 30 A dIF/dt = 100 A/µs
VFR = 1.5 x VFmax, Tj = 25 °C
IF = 30 A, dIF/dt = 100 A/µs,
Tj = 25 °C
Min. Typ Max. Unit
100
53 70 ns
42 55
24 32 A
1
450 ns
5
V
Figure 1. Conduction losses versus
average current
P(W)
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0
5
=0.1
=0.05
=0.2
=0.5
=1
T
IF(AV)(A)
10
15
20
25
30
35
40
Figure 2. Forward voltage drop versus
forward current
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0
0.5
Tj=150°C
(Maximum values)
Tj=150°C
(Typical values)
Tj=25°C
(Maximum values)
VFM(V)
1.0
1.5
2.0
2.5
3.0
3.5
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9 Single pulse
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
60
VR=600V
50
Tj=125°C
40
IF= IF(AV)
IF= 2 x IF(AV)
30
IF=0.5 x IF(AV)
20
10
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Doc ID 018923 Rev 1
3/9
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