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STTH6006W 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STTH6006W
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH6006W Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
STTH6006W
Characteristics
Figure 1. Conduction losses versus
average current
PF(AV)(W)
110
100
δ = 0.2
90
δ = 0.1
80
δ = 0.05
70
60
50
40
30
20
10
0
0
IF(AV)(A)
5 10 15 20 25 30 35 40
δ = 0.5
δ=1
T
δ=tp/T
tp
45 50 55 60 65 70
Figure 2. Forward voltage drop versus
forward current
200 IFM(A)
180
160
140
120
100
80
60
40
20
0
0.0 0.2 0.4
Tj=150°C
(maximum values)
Tj=150°C
(typical values)
0.6 0.8 1.0 1.2 1.4
Tj=25°C
(maximum values)
VFM(V)
1.6 1.8 2.0 2.2 2.4
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Peak reverse recovery current
versus dIF/dt (typical values)
1.0 Zth(j-c)/Rth(j-c)
0.9 Single pulse
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
50 IRM(A)
45
VR=400V
Tj=125°C
40
IF=2 x IF(AV)
35
IF=IF(AV)
30
IF=0.5 x IF(AV)
25
20
IF=0.25 x IF(AV)
15
10
5
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 5. Reverse recovery time versus
dIF/dt (typical values)
500 trr(ns)
450
400
VR=400V
Tj=125°C
350
300
IF=2 x IF(AV)
250
200
IF=IF(AV)
IF=0.5 x IF(AV)
150
100
50
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
3000 Qrr(nC)
2750
2500
VR=400V
Tj=125°C
2250
IF=2 x IF(AV)
2000
1750
1500
IF=IF(AV)
1250
1000
IF=0.5 x IF(AV)
750
500
250
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
3/7

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