STTH6006W 查看數據表（PDF） - STMicroelectronics
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STTH6006W Datasheet PDF : 7 Pages
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Characteristics
STTH6006W
Figure 7. Softness factor versus
dIF/dt (typical values)
S factor
0.6
0.5
IF ≤ 2 x IF(AV)
VR = 400 V
Tj = 125° C
0.4
0.3
0.2
0.1
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
1.25
1.00
0.75
0.50
0.25
0.00
25
tRR
IRM
QRR
Tj(°C)
50
75
IF=IF(AV)
VR=400V
Reference: Tj=125°C
100
125
Figure 9. Transient peak forward voltage
versus dIF/dt (typical values)
8.0 VFP(V)
7.5
IF=IF(AV)
7.0
Tj=125°C
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
dIF/dt(A/µs)
0.0
0
100
200
300
400
500
Figure 10. Forward recovery time versus
dIF/dt (typical values)
1000 tfr(ns)
900
800
700
600
500
400
300
200
100
0
0
100
dIF/dt(A/µs)
200
300
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
400
500
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
VR(V)
10
1
10
100
1000
4/7
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