STTH6010 查看數據表（PDF） - STMicroelectronics
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STTH6010 Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
STTH6010
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Tc = 75° C
Repetitive peak forward current
tp = 5 µs, F = 5 kHz square
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
1000
V
80
A
60
A
450
A
400
A
-65 to + 175 °C
175
°C
Table 2. Thermal parameters
Symbol
Rth(j-c)
Junction to case
Parameter
Value
0.78
Unit
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 100° C
Tj = 150° C
VR = VRRM
IF = 60 A
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 1.3 x IF(AV) + 0.0067 IF2(RMS)
20
µA
20 200
2.0
1.4
1.8
V
1.3 1.7
2/8
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