STTH6010 查看數據表（PDF） - STMicroelectronics
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STTH6010 Datasheet PDF : 8 Pages
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STTH6010
Characteristics
Table 4.
Symbol
Dynamic characteristics
Parameter
trr Reverse recovery time
IRM Reverse recovery current
S Softness factor
tfr Forward recovery time
VFP Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
IF = 1 A, dIF/dt = -200 A/µs,
VR = 30 V, Tj = 25° C
IF = 60 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
IF = 60 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
IF = 60 A dIF/dt = 100 A/µs
VFR = 1.5 x VFmax, Tj = 25° C
IF = 60 A, dIF/dt = 100 A/µs,
Tj = 25° C
Min. Typ Max. Unit
115
61 80 ns
49 65
31 40
A
1
750 ns
4
V
Figure 1.
P(W)
140
120
100
80
Conduction losses versus
average current
=0.2
=0.1
=0.05
=0.5
=1
60
40
20
0
0
IF(AV)(A)
10
20
30
40
50
T
60
70
80
Figure 2. Forward voltage drop versus
forward current
IFM(A)
200
180
Tj=150°C
160
(Maximum values)
140
120
Tj=150°C
(Typical values)
100
80
Tj=25°C
(Maximum values)
60
40
20
VFM(V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
Single pulse
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
70
VR=600V
60
Tj=125°C
50
IF= IF(AV)
IF= 2 x IF(AV)
40
IF=0.5 x IF(AV)
30
20
10
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
3/8
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