STU9NC80 查看數據表（PDF） - STMicroelectronics
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STU9NC80
STMicroelectronics
STU9NC80 Datasheet PDF : 10 Pages
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STU9NC80Z/STU9NC80ZI
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
Max220
I-Max220
0.78
2.27
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
8.6
400
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
800
Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp.
ID = 1 mA, VGS = 0
1
Coefficient
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±10
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.7A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
3
Typ.
4
0.82
Max.
5
0.9
Unit
V
Ω
8.6
A
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =4.7A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
13
3500
230
25
Max.
Unit
S
pF
pF
pF
2/10
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