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STV8179F 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STV8179F
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STV8179F Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STV8179F
1 Absolute Maximum Ratings
Absolute Maximum Ratings
Symbol
VS
V6
V1,V7
IO
I3
I3
VESD
V3-V2
TOPER
TSTG
TJ
Parameter
Supply Voltage (Pin 2) (see note 1)
Flyback Peak Voltage (Pin 6) (see note 1)
Amplifier Input Voltage (Pins 1-7) (see note 1)
Maximum Output Peak Current (see notes 2 and 3)
Maximum Sink Current (t < 1ms)
Maximum Source Current (t < 1ms) (in the diode, see Block Diagram) (see
note 2)
ESD Susceptibility: EIAJ Norm (200pF discharged through 0)
Voltage Difference between Flyback Supply and Supply Voltage
Operating Ambient Temperature
Storage Temperature
Junction Temperature
Value
50
120
-0.3, + VS
3.0
3.0
3.0
Unit
V
V
V
A
A
A
300
V
50
V
-20, +75
°C
-40, +150
°C
+ 150
°C
Note: 1 Versus Pin 4.
2 The output current can reach 6A peak for t ≤ 10µs (up to 120 Hz)
3 Provided SOAR is respected (see Figures 3 and 4).
2 Thermal Data
Symbol
Rth (j-c)
TT
TJR
Parameter
Junction-Case Thermal Resistance Max.
Temperature for Thermal Shutdown
Recommended Max. Junction Temperature
Value
3
150
120
Unit
°C/W
°C
°C
3/9

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