SUD50N06-07L-E3 查看數據表（PDF） - Vishay Semiconductors
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SUD50N06-07L-E3 Datasheet PDF : 4 Pages
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SUD50N06-07L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 10 V, ID = 20 A, TJ = 175_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 50 A
VDD = 30 V, RL = 0.6 W
ID ] 50 A, VGEN = 10 V, Rg = 2.5 W
Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Is
ISM
VSD
IF = 30 A, VGS = 0 V
trr
IF = 30 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
60
V
1
3
"100
nA
1
50
mA
150
50
A
0.0061 0.0074
0.0122
W
0.0148
0.0071 0.0088
20
80
S
5800
450
pF
300
96
144
19
nC
20
1.5
W
15
25
13
20
ns
62
95
14
25
50
A
100
0.90
1.50
V
37
55
ns
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2
Document Number: 72953
S-41133—Rev. A, 07-Jun-04
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