SUD50N06-08H0-E3 查看數據表（PDF） - Vishay Semiconductors
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SUD50N06-08H0-E3 Datasheet PDF : 5 Pages
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SUD50N06-08H
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125 °C
VDS = 60 V, VGS = 0 V, TJ = 175 °C
VDS = 5 V, VGS = 10 V
Drain-Source On-State Resistanceb
Forward Transconductanceb
rDS(on)
gfs
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS = 10 V, ID = 20 A, TJ = 175 °C
VDS = 15 V, ID = 20 A
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Chargec
Ciss
Coss
Crss
Rg
Qg
VGS = 0 V, VDS = 25 V, F = 1 MHz
f = 1 MHz
Gate-Source Chargec
Gate-Drain Chargec
Qgs
VDS = 30 V, VGS = 10 V, ID = 50 A
Qgd
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
td(on)
tr
td(off)
VDD = 30 V, RL = 0.6 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
IF = 50 A, VGS = 0 V
Source-Drain Reverse Recovery Time
trr
IF = 50 A, di/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Min
Typa
Max
Unit
60
V
3.4
4.5
± 100
nA
1
50
µA
250
50
A
0.0065 0.0078
0.013
Ω
0.0156
25
S
7000
450
pF
240
0.75
1.5
2.3
Ω
94
145
35
nC
20
28
45
13
20
ns
50
75
10
15
100
A
1.0
1.5
V
45
70
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73160
S-71661-Rev. B, 06-Aug-07
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